 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| l l Logic-Level Gate Drive Advanced Process Technology l Surface Mount (IRLZ34NS) l Low-profile through-hole (IRLZ34NL) l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET D IRLZ34NSPbF IRLZ34NLPBF (R) VDSS = 55V RDS(on) = 0.035 PD - 95583 G ID = 30A S Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C V GS EAS IAR EAR dv/dt TJ TSTG Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ34NL) is available for lowprofile applications. D 2 Pak TO-262 Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 30 21 110 3.8 68 0.45 16 110 16 6.8 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. 2.2 40 Units C/W www.irf.com 1 07/20/04 IRLZ34NS/LPbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V (BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. 55 1.0 11 Typ. 0.065 8.9 100 21 29 Max. Units Conditions V V GS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.035 V GS = 10V, ID = 16A 0.046 V GS = 5.0V, ID = 16A 0.060 V GS = 4.0V, ID = 14A 2.0 V V DS = V GS, ID = 250A S V DS = 25V, I D = 16A 25 V DS = 55V, V GS = 0V A 250 V DS = 44V, VGS = 0V, TJ = 150C 100 V GS = 16V nA -100 V GS = -16V 25 I D = 16A 5.2 nC V DS = 44V 14 V GS = 5.0V, See Fig. 6 and 13 V DD = 28V I D = 16A ns R G = 6.5, V GS = 5.0V R D = 1.8, See Fig. 10 Between lead, 7.5 nH and center of die contact 880 V GS = 0V 220 pF V DS = 25V 94 = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Min. Typ. Max. Units IS I SM V SD trr Q rr ton Conditions D MOSFET symbol 30 showing the A G integral reverse 110 S p-n junction diode. 1.3 V TJ = 25C, IS = 16A, VGS = 0V 76 110 ns TJ = 25C, IF = 16A 190 290 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) RG = 25, IAS = 16A. (See Figure 12) ISD 16A, di/dt 270A/s, VDD V(BR)DSS, TJ 175C VDD = 25V, starting TJ = 25C, L =610H Pulse width 300s; duty cycle 2%. Uses IRLZ34N data and test conditions ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRLZ34NS/LPbF 1000 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 1000 ID , Drain-to-Source Current (A) 100 ID , Drain-to-Source Current (A) 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP 10 10 2.5V 1 1 2.5V 0.1 0.1 20s PULSE WIDTH T J = 25C 1 10 A 100 0.1 0.1 20s PULSE WIDTH T J = 175C 1 10 A 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics R DS(on) , Drain-to-Source On Resistance (Normalized) 1000 3.0 I D = 27A I D , Drain-to-Source Current (A) 2.5 100 TJ = 25C TJ = 175C 10 2.0 1.5 1.0 1 0.5 0.1 2 3 4 5 6 V DS = 25V 20s PULSE WIDTH 7 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 VGS = 10V 80 100 120 140 160 180 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRLZ34NS/LPbF 1400 V GS , Gate-to-Source Voltage (V) 1200 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd Ciss C oss = C ds + C gd 15 I D = 16A V DS = 44V V DS = 28V 12 C, Capacitance (pF) 1000 800 9 Coss 600 6 400 Crss 200 3 0 1 10 100 A 0 0 4 8 12 16 FOR TEST CIRCUIT SEE FIGURE 13 20 24 28 32 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 100 I D , Drain Current (A) 100 10s TJ = 175C TJ = 25C 10 100s 10 1ms 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VGS = 0V 1.8 A 1 1 TC = 25C TJ = 175C Single Pulse 10 10ms 2.0 A 100 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRLZ34NS/LPbF 40 V DS V GS RD ID , Drain Current (A) 30 RG 5.0V D.U.T. + V DD - 20 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 10 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 10 Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.05 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 0.1 0.02 0.01 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRLZ34NS/LPbF L VDS D.U.T. RG + V - DD 5.0 V EAS , Single Pulse Avalanche Energy (mJ) 250 TOP 200 BOTTOM ID 6.6A 11A 16A IAS tp 0.01 150 100 Fig 12a. Unclamped Inductive Test Circuit 50 V(BR)DSS tp VDD VDS 0 VDD = 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 5.0 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit 6 www.irf.com IRLZ34NS/LPbF Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + V DD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRLZ34NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T H IS IS AN IR F 530S WIT H L OT CODE 8024 AS S E MB L E D ON WW 02, 2000 IN T HE AS S E MB L Y L INE "L " Note: "P" in as s embly line pos ition indicates "L ead-F ree" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R F 530S DAT E CODE YE AR 0 = 2000 WE E K 02 L INE L OR INT E R NAT IONAL RE CT IF IE R L OGO AS S E MB LY L OT CODE P ART NU MB E R F 530S DAT E CODE P = DE S IGNAT E S L E AD-F RE E P RODU CT (OP T IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E CODE 8 www.irf.com IRLZ34NS/LPbF TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information E XAMPL E: T HIS IS AN IRL 3103L L OT CODE 1789 AS S EMBL ED ON WW 19, 1997 IN T HE AS S E MB LY LINE "C" Note: "P" in ass embly line pos ition indicates "Lead-Free" INT ERNAT IONAL RE CT IFIER LOGO AS S E MBL Y LOT CODE PART NUMBER DAT E CODE YE AR 7 = 1997 WE EK 19 LINE C OR INTE RNAT IONAL RECT IF IER LOGO AS S EMBLY L OT CODE PART NUMB ER DATE CODE P = DE S IGNAT E S L EAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEE K 19 A = AS S EMBL Y S IT E CODE www.irf.com 9 IRLZ34NS/LPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 1.65 (.065) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 16.10 (.634) 15.90 (.626) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ |
Price & Availability of IRLZ34NLPBF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |